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Работы, на которые ссылается эта работа

Работ: 43

Работа: The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

  1. Electronic irradiation of TlInSxSe2−x (x = 1): Morphology, structure and raman scattering

    M. Yu. Tashmetov, F. K. Khallokov, N.B. Ismatov +2

    СтатьяSolid-state spectroscopy and crystallographyInternational Journal of Modern Physics B2021Цитирований: 13
    ABI

  2. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    СтатьяQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B2024Цитирований: 8
    ABI

  3. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Статья2020Цитирований: 4
    ABI

  4. The influence of electron beams to structure parameters of multi walled carbon nanotube

    I.I. Yuldashova, M. Yu. Tashmetov

    СтатьяCarbon Nanotubes in CompositesPhysica B Condensed Matter2019Цитирований: 3
    ABI

  5. Atomic Radii in Crystals

    J. C. Slater

    Статья1964Цитирований: 3
    ABI

  6. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Статья1990Цитирований: 3
    ABI

  7. Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons

    E. Clementi, D. L. Raimondi, William P. Reinhardt

    Статья1967Цитирований: 3
    ABI

  8. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Статья2016Цитирований: 3
    ABI

  9. Materials science and engineering: An introduction

    Clive R. Clayton

    Статья1987Цитирований: 3
    ABI

  10. Atomic and electron structure of the GaAs (001) surface

    S. E. Kulkova, С. В. Еремеев, A. V. Postnikov +2

    Статья2007Цитирований: 2
    ABI

  11. GaAs nanocrystals: Structure and vibrational properties

    Jhasaketan Nayak, S.N. Sahu, Satoshi Nozaki

    Статья2005Цитирований: 2
    ABI

  12. Microhardness profile in heteroepitaxial InAs/GaAs structures

    E. P. Trifonova, L. Hitova

    Статья1993Цитирований: 2
    ABI

  13. Effects of oxygen implantation in GaAs

    L. He, W.A. Anderson

    Статья1993Цитирований: 2
    ABI

  14. Porous layers on compensated GaAs:Cr

    A. S̆imkien≐, J. Sabataityt≐, V. Karpus +4

    Статья2003Цитирований: 2
    ABI

  15. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Статья2007Цитирований: 2
    ABI

  16. Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges

    Z. P. Wang, L. Ley, M. Cardona

    Статья1982Цитирований: 2
    ABI

  17. High-purity GaAs and Cr-doped GaAs epitaxial layers by MBE

    H. Morkoç, A. Y. Cho

    Статья1979Цитирований: 2
    ABI

  18. Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

    J. Schneider, B. Dischler, H. Seelewind +5

    Статья1989Цитирований: 2
    ABI

  19. Brinell and Vickers Hardness Measurement Using Image Processing and Analysis Techniques

    Pedro P. Rebouças Filho, Tarique da Silveira Cavalcante, Victor Hugo C. de Albuquerque +1

    Статья2009Цитирований: 2
    ABI

  20. Experimental evidence for a negative-<i>U</i>center in gallium arsenide related to oxygen

    H. Ch. Alt

    Статья1990Цитирований: 2
    ABI

  21. Characterization of Physical, Thermal and Structural Properties of Chromium (VI) Oxide Powder: Impact of Biofield Treatment

    Mahendra Kumar Trivedi

    Статья2015Цитирований: 2
    ABI

  22. Mikro- und Ultramikrohärteprüfung an GaAs-Einkristallen

    F. Bergner, Ute Bergmann, Michael Schäper +2

    Статья2001Цитирований: 2
    ABI

  23. Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique

    M. Hassan, Saima Younas, Falak Sher +3

    Статья2017Цитирований: 2
    ABI

  24. Measurement uncertainty of surface roughness measurement

    G Farkas, Ágota Drégelyi-Kiss

    Статья2018Цитирований: 2
    ABI

  25. Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

    Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales 170004, Colombia, Camilo Pulzara-Mora, José Doria-Andrade +7

    Статья2024Цитирований: 2
    ABI