Simulation of Tunnel Diode I–V Characteristics with Photocurrent and Phonon-Assisted Processes
Аннотация
In this paper, a unified current model for tunnel diodes has been developed. The model incorporates not only the tunneling, diffusion, and excess currents but also the photocurrent generated under illumination. In addition, phonon-assisted tunneling processes, namely phonon absorption and phonon emission, arising from electron–phonon interactions, have been included. The calculated current–voltage characteristics indicate that the total current shifts downward under illumination. It is demonstrated that the photocurrent increases proportionally with the optical intensity and wavelength. In the case of phonon absorption, electrons gain additional energy, the tunneling channel broadens, and the peak current increases by approximately 15–20%. Conversely, during phonon emission, part of the electron energy is lost, reducing the tunneling probability, and the peak current decreases by about 10–12%. The obtained results indicate that accounting for phonon and photon processes significantly extends the application potential of tunnel diodes in optoelectronic and photodetector devices. The proposed model provides a theoretical basis for the development of tunnel diodes as high-frequency, light-sensitive, and energy-efficient devices.