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Работы, на которые ссылается эта работа

Работ: 257

Работа: 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications

  1. Memristor-The missing circuit element

    Leon O. Chua

    Статья1971Цитирований: 8
    ABI

  2. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
    ABI

  3. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
    ABI

  4. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6
    ABI

  5. Memristive switching mechanism for metal/oxide/metal nanodevices

    J. Joshua Yang, Matthew D. Pickett, Xuema Li +3

    Статья2008Цитирований: 6
    ABI

  6. Memristive devices for computing

    J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart

    Статья2012Цитирований: 6
    ABI

  7. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

    Sattam Al Otaibi, Nasir Ilyas, Mohammed Zubair M. Shamim +6

    Статья2021Цитирований: 6
    ABI

  8. Organic and inorganic nanomaterials: fabrication, properties and applications

    Basmah H. Alshammari, Maha M. A. Lashin, Muhammad Adil Mahmood +7

    Обзорная статьяZnO doping and propertiesRSC Advances2023Цитирований: 5
    ABI

  9. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

    Ruijing Ge, Xiaohan Wu, Myungsoo Kim +6

    Статья2017Цитирований: 5
    ABI

  10. A survey of deep neural network architectures and their applications

    Weibo Liu, Zidong Wang, Xiaohui Liu +3

    Статья2016Цитирований: 5
    ABI

  11. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon +2

    Статья2014Цитирований: 5
    ABI

  12. Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing

    Sattam Al Otaibi, Shahid Iqbal, Fazal Raziq +3

    Статья2024Цитирований: 5
    ABI

  13. Mastering the game of Go with deep neural networks and tree search

    David Silver, Aja Huang, Chris J. Maddison +17

    Статья2016Цитирований: 5
    ABI

  14. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

    Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2024Цитирований: 4
    ABI

  15. Metal–Oxide RRAM

    H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu +6

    Статья2012Цитирований: 4
    ABI

  16. Без названия

    ДругоеЦитирований: 4
    ABI

  17. Neuromorphic nanoelectronic materials

    Vinod K. Sangwan, Mark C. Hersam

    Обзорная статья2020Цитирований: 4
    ABI

  18. Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing

    Sattam Al Otaibi, Fazal Raziq, Iftikhar Ahmad +3

    Статья2024Цитирований: 4
    ABI

  19. Two-dimensional semiconductors with possible high room temperature mobility

    Wenxu Zhang, Zhishuo Huang, Wanli Zhang +1

    Статья2014Цитирований: 3
    ABI

  20. Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films

    Jin Cheol Park, Seok Joon Yun, Hyun Kim +7

    Статья2015Цитирований: 3
    ABI

  21. Synaptic plasticity: taming the beast

    L. F. Abbott, Sacha B. Nelson

    Обзорная статья2000Цитирований: 3
    ABI

  22. In-memory computing with resistive switching devices

    Daniele Ielmini, H.‐S. Philip Wong

    Статья2018Цитирований: 3
    ABI

  23. A MoS<sub>2</sub>/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang, Chunsheng Chen, Zhihao Yu +8

    Статья2018Цитирований: 3
    ABI

  24. Nonvolatile Memories Based on Graphene and Related 2D Materials

    Simone Bertolazzi, Paolo Bondavalli, Stephan Roche +5

    Обзорная статья2019Цитирований: 3
    ABI

  25. A synaptic memristor based on two-dimensional layered WSe<sub>2</sub> nanosheets with short- and long-term plasticity

    Songwen Luo, Kanghong Liao, Peixian Lei +8

    Статья2021Цитирований: 3
    ABI