2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications
Sattam Al OtaibiDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanNaveed ur RehmanDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanSujith KalluriDepartment of Electronics and Communication Engineering, School of Engineering and Sciences, SRM University-AP, Amaravati 522240, Andhra Pradesh, IndiaSundaravadivel ElumalaiHIDE- Laboratory, Department of Chemistry, Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, IndiaAppukuttan SarithaDepartment of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, IndiaMahbubul AlamDepartment of Physics, Government College University Faisalabad, Faisalabad 38000, PakistanMuhammad IkramDepartment of Chemistry, Abdul Wali Khan University Mardan, 23200, KP, PakistanSherzod AbdullaevSenior Researcher, Faculty of Chemical Engineering, New Uzbekistan University, Tashkent, UzbekistanNasir RahmanDepartment of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, PakistanSambasivam SangarajuNational Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates
ABI
Аннотация
film-based memristor arrays attaining over 90% recognition accuracy in handwritten digit identification tests further demonstrates the devices' great scalability, stability, and incorporation capabilities. Notwithstanding these developments, issues such as poor environmental robustness, phase transition sensitivity, and low thermal stability still exist. The creation of hybrid or composite materials, doping, and structural alteration are some of the methods to get beyond these obstacles that are covered in the paper. The need for scalable, economical synthesis techniques and a better comprehension of the material's mechanical, optical, and electrical properties through modeling and experiments are emphasized.
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