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Ferroelectric and Negative Capacitance Devices

Работ: 42

  1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
    ABI

  2. Efficient CNN Accelerator with FPGA for eye disorders Prediction

    P Karthik Reddy, Abdullaeva Dilbar Ubaydullaevna, Anorgul Ashirova +3

    СтатьяFerroelectric and Negative Capacitance Devices2025Цитирований: 5
    ABI

  3. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    СтатьяAdvanced Memory and Neural ComputingEast European Journal of Physics2025Цитирований: 4
    ABI

  4. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

    Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2
    ABI

  5. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

    Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

    СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2
    ABI

  6. <scp>LAX</scp> phases: A family of novel stable layered materials, informatics‐based discovery

    Ehsan Alibagheri, Mohammad Khazaei, Mehdi Estili +5

    СтатьяMXene and MAX Phase MaterialsInfoMat2025Цитирований: 2
    ABI

  7. Memristive Devices from CuO Nanoparticles

    Pundalik D. Walke, Abu ul Hassan S. Rana, Sh. U. Yuldashev +5

    СтатьяAdvanced Memory and Neural ComputingNanomaterials2020Цитирований: 1
    ABI

  8. Recent innovations in 2D magnetic materials and their potential applications in the modern era

    Ehsan Elahi, Muhammad Asghar Khan, Muhammad Suleman +8

    Статья2D Materials and ApplicationsMaterials Today2023Цитирований: 1
    ABI

  9. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

    Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

    СтатьяAdvanced Memory and Neural ComputingNanomaterials2023Цитирований: 1
    ABI

  10. Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses

    Sattam Al Otaibi, Naveed Ur Rahman, Muhammad Faisal Hayat +10

    Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2024Цитирований: 1
    ABI

  11. Design and Simulation of Four-Stage FinFET Amplifier

    Jami Venkata Suman, P.Anitha, Jaya sudha reddy +3

    СтатьяAnalog and Mixed-Signal Circuit Design2025Цитирований: 1
    ABI

  12. Single flake homo p–n diode of MoTe <sub>2</sub> enabled by oxygen plasma doping

    Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

    Статья2D Materials and ApplicationsNanotechnology Reviews2024Цитирований: 1
    ABI

  13. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1
    ABI

  14. Table of Contents

    Karl H. Menges

    ГлаваDiverse Scientific and Economic StudiesColumbia University Press eBooks1947Цитирований: 0
    ABI

  15. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

    Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Chemistry C2017Цитирований: 0
    ABI

  16. Table of Contents

    ГлаваDiverse Scientific and Economic Studies2018Цитирований: 0
    ABI

  17. Table of Contents

    ГлаваDiverse Scientific and Economic StudiesPrinceton University Press eBooks2020Цитирований: 0
    ABI

  18. Table of Contents

    ГлаваDiverse Scientific and Economic Studies2021Цитирований: 0
    ABI

  19. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Статья2D Materials and Applications2022Цитирований: 0
    ABI

  20. Table of Contents

    ГлаваDiverse Scientific and Economic StudiesUniversity of Hawaii Press eBooks2023Цитирований: 0
    ABI

  21. Table of Contents

    ГлаваDiverse Scientific and Economic StudiesUniversity of Hawaii Press eBooks2023Цитирований: 0
    ABI

  22. Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

    Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan +8

    СтатьяAdvanced Memory and Neural ComputingSmall Structures2024Цитирований: 0
    ABI

  23. Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

    Naveed Ur Rahman, Muhammad Adil Mahmood, Nasir Rahman +5

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 0
    ABI

  24. Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2024Цитирований: 0
    ABI

  25. Table of Contents

    ГлаваDiverse Scientific and Economic StudiesUniversity Press of Mississippi eBooks2024Цитирований: 0
    ABI