Статья

Single flake homo p–n diode of MoTe <sub>2</sub> enabled by oxygen plasma doping

Irsa ZulfiqarDepartment of Electrical Engineering, Sejong University , Seoul 05006 , Republic of KoreaSania GulDepartment of Chemistry, Islamia College Peshawar, Jamrod Road, University Campus Peshawar , Khyber Pakhtunkhwa , 25120 , PakistanHafiz Aamir SohailDepartment of Physics, University of Alberta , Edmonton , Alberta , CanadaIqra RabaniDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University , Seoul , 05006 , Republic of KoreaSaima GulDepartment of Chemistry, Islamia College Peshawar, Jamrod Road, University Campus Peshawar , Khyber Pakhtunkhwa , 25120 , PakistanMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University , Tashkent , 100007 , UzbekistanSaikh Mohammad WabaidurChemistry Department, College of Science, King Saud University , Riyadh 11451 , Saudi ArabiaMuhammad YasirInam UllahMuhammad Asghar KhanDepartment of Electrical Engineering, Sejong University , Seoul 05006 , Republic of KoreaShania RehmanDepartment of Semiconductor System Engineering, Sejong University , Seoul 05006 , Republic of KoreaMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University , Seoul 05006 , Republic of Korea

Nanotechnology Reviewsjournal2024en

ABI

Аннотация

Abstract Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p–n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe 2 device. The MoTe 2 field effect transistors (FETs) show high electron mobility of about ∼23.54 cm 2 V −1 s −1 and a current ON/OFF ratio of ∼10 6 while p-type FETs show hole mobility of about ∼9.25 cm 2 V −1 s −1 and current ON/OFF ratio ∼10 5 along with artificially created lateral MoTe 2 p–n junction, exhibited a rectification ratio of ∼10 2 and ideality factor of ∼1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.

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Темы

2D Materials and Applications Graphene research and applications Ferroelectric and Negative Capacitance Devices

Идентификаторы

DOI: 10.1515/ntrev-2023-0207

Цитирования и источники

Цитирований: 1 Использованных источников: 43

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