Статья

Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors

Ulugbek ErkaboevNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, UzbekistanR. G. RakhimovNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, UzbekistanJ. I. MirzaevNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, UzbekistanN. A. SayidovNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, UzbekistanMuzaffar DadamirzaevNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, UzbekistanQudratali TemirovNamangan State Technical University, I.Karimov Str. 12, 160103, Namangan, Uzbekistan

Journal of Computational Electronicsjournal2026en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor Quantum Structures and Devices Electronic and Structural Properties of Oxides 2D Materials and Applications

Идентификаторы

DOI: 10.1007/s10825-026-02540-5

Цитирования и источники

Цитирований: 0Использованных источников: 34

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