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Работы, на которые ссылается эта работа
Работ: 58
Работа: Conductive filament dynamics in cerium-doped ZnFe₂O₄ thin films for enhanced unipolar resistive switching in RRAM devices
NIH Image to ImageJ: 25 years of image analysis
Caroline A Schneider, Wayne Rasband, Kevin W. Eliceiri
Статья2012Цитирований: 24ABIMemristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang, Matthew D. Pickett, Xuema Li +3
Статья2008Цитирований: 8ABIRole of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
M. Janousch, G. I. Meijer, U. Staub +3
Статья2007Цитирований: 4ABICe-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices
Статья2017Цитирований: 4ABIEnhanced stability of filament-type resistive switching by interface engineering
Статья2017Цитирований: 3ABI