Role of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
M. JanouschSwiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)G. I. MeijerIBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)U. StaubSwiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)B. DelleySwiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Siegfried KargIBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)B. P. AndreassonSwiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)
2007en
ABI
Аннотация
Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance-change memory is investigated by X-ray fluorescence (see figure), infrared microscopy, and X-ray absorption spectroscopy using Cr-doped SrTiO3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
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