Работы, цитирующие эту работу

Работ: 3

Работа: Role of Oxygen Vacancies in Cr‐Doped SrTiO₃ for Resistance‐Change Memory

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

   Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

   СтатьяAdvanced Memory and Neural ComputingRSC Advances2024Цитирований: 4

   ABIABI:AkademIndex/openalex/2024.article.000258

3. Supercontinuum Generation in Cr-Doped Bulk SrTiO3

   A. G. Shmelev, Д. К. Жарков, A. V. Leontyev +2

   СтатьяLaser Material Processing TechniquesBulletin of the Russian Academy of Sciences Physics2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.001485