Field-induced resistive switching in metal-oxide interfaces
S. TsuiDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002A. BaikalovDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002J. CmaidalkaDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002Y. Y. SunDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002Y. Q. WangDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002Y. Y. XueDepartment of Physics and Texas Center for Superconductivity and Advanced Materials ,University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002C. W. ChuDepartment of Physics and Texas Center for Superconductivity and Advanced Materials , University of Houston, 202 Houston Science Center, Houston, Texas 77204-5002, , 1 Cyclotron Road, Berkeley, California 94720 and , Hong KongL. ChenDepartment of Chemistry , University of Houston, 136 Fleming Building, Houston, Texas 77204-5003A. J. JacobsonDepartment of Chemistry , University of Houston, 136 Fleming Building, Houston, Texas 77204-5003
2004en
ABI
Аннотация
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I–V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.
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