Работы, цитирующие эту работу

Работ: 2

Работа: Field-induced resistive switching in metal-oxide interfaces

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Properties of Heterophase Bi/Pb Ceramics Synthesized Using Solar Energy in the Temperature Range of 80–340 K

   D. D. Gulamova, S. Z. Mirzaev, S. Kh. Bobokulov +1

   СтатьяPhysics of Superconductivity and MagnetismApplied Solar Energy2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.018815