Работы, цитирующие эту работу

Работ: 2

Работа: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

   Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

   Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.review-article.000035