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Работы, цитирующие эту работу

Работ: 6

Работа: Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

  1. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
    ABI

  2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
    ABI

  3. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 4
    ABI

  4. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

    Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

    СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2
    ABI

  5. Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

    Naveed Ur Rahman, Muhammad Adil Mahmood, Nasir Rahman +5

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 0
    ABI

  6. 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications

    Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

    Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2025Цитирований: 0
    ABI