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Работы, на которые ссылается эта работа

Работ: 63

Работа: Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

  1. The missing memristor found

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1

    Статья2008Цитирований: 11
    ABI

  2. Double-slit photoelectron interference in strong-field ionization of the neon dimer

    M. Kunitski, Nicolas Eicke, P. Huber +13

    Статья2019Цитирований: 9
    ABI

  3. Double-slit photoelectron interference in strong-field ionization of the neon dimer

    Maksim Kunitski, Nicolas Eicke, Pia Huber +13

    Статья2018Цитирований: 8
    ABI

  4. Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness

    Michiru Nishita, Seung‐Yeol Park, Tadashi Nishio +9

    Статья2017Цитирований: 7
    ABI

  5. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

    Valentina Cappello, Laura Marchetti, Paola Parlanti +5

    Статья2016Цитирований: 6
    ABI

  6. Structural absorption by barbule microstructures of super black bird of paradise feathers

    Dakota E. McCoy, Teresa J. Feo, Todd Alan Harvey +1

    Статья2017Цитирований: 6
    ABI

  7. Memristive switching mechanism for metal/oxide/metal nanodevices

    J. Joshua Yang, Matthew D. Pickett, Xuema Li +3

    Статья2008Цитирований: 6
    ABI

  8. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

    Sattam Al Otaibi, Nasir Ilyas, Mohammed Zubair M. Shamim +6

    Статья2021Цитирований: 6
    ABI

  9. Occurrence of the potent mutagens 2- nitrobenzanthrone and 3-nitrobenzanthrone in fine airborne particles

    Aldenor Gomes Santos, Gisele O. da Rocha, Jaílson B. de Andrade

    Статья2019Цитирований: 6
    ABI

  10. U1 snRNP regulates cancer cell migration and invasion in vitro

    Jung‐Min Oh, Christopher C. Venters, Chao Di +8

    Статья2020Цитирований: 3
    ABI

  11. Vertically Aligned ZnO Nanorod Arrays Sentisized with Gold Nanoparticles for Schottky Barrier Photovoltaic Cells

    Zhenhua Chen, Yongbing Tang, Chao Ping Liu +9

    Статья2009Цитирований: 3
    ABI

  12. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

    Ee Wah Lim, Razali Ismail

    Статья2015Цитирований: 2
    ABI

  13. ZnO Schottky barriers and Ohmic contacts

    L. J. Brillson, Yicheng Lu

    Статья2011Цитирований: 2
    ABI

  14. PRINCIPLES OF NEURAL SCIENCE

    Michael Henry

    Статья1995Цитирований: 2
    ABI

  15. Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band‐Bending

    Youfan Hu, Yang Liu, Wenliang Li +4

    Статья2009Цитирований: 2
    ABI

  16. Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors

    Mou Pal, Umapada Pal, Justo Miguel Gracia y Jiménez +1

    Статья2012Цитирований: 2
    ABI

  17. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

    Zhongrui Wang, Saumil Joshi, Sergey Savel’ev +14

    Статья2016Цитирований: 2
    ABI

  18. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

    Gianluca Milano, Michael Luebben, Zheng Ma +6

    Статья2018Цитирований: 2
    ABI

  19. Flexible artificial nociceptor using a biopolymer-based forming-free memristor

    Jun Ge, Shan Zhang, Zhiyu Liu +2

    Статья2019Цитирований: 2
    ABI

  20. Ultrathin TiO<i><sub>x</sub></i> Interface‐Mediated ZnO‐Nanowire Memristive Devices Emulating Synaptic Behaviors

    Ming Xiao, Travis Yeow, Việt Hương Nguyễn +4

    Статья2019Цитирований: 2
    ABI

  21. Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor

    Ming Xiao, Daozhi Shen, Moritz H. Futscher +4

    Статья2019Цитирований: 2
    ABI

  22. 2D MoS<sub>2</sub>-Based Threshold Switching Memristor for Artificial Neuron

    Durjoy Dev, Adithi Krishnaprasad, Mashiyat Sumaiya Shawkat +6

    Статья2020Цитирований: 2
    ABI

  23. Artificial Nociceptor Using 2D MoS<sub>2</sub> Threshold Switching Memristor

    Durjoy Dev, Mashiyat Sumaiya Shawkat, Adithi Krishnaprasad +2

    Статья2020Цитирований: 2
    ABI

  24. Nociceptive Memristor

    Yumin Kim, Young Jae Kwon, Dae Eun Kwon +8

    Статья2018Цитирований: 2
    ABI

  25. Без названия

    ДругоеЦитирований: 1
    ABI