Статья

Epitaxial growth of a monolayer WSe <sub>2</sub> -MoS <sub>2</sub> lateral p-n junction with an atomically sharp interface

Mingyang LiPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi ArabiaYumeng ShiPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi ArabiaChia-Chin ChengDepartment of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, TaiwanLi‐Syuan LuDepartment of Electrophysics, National Chiao Tung University, Hsinchu, TaiwanYung‐Chang LinNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, JapanHaolin TangPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi ArabiaMeng‐Lin TsaiComputer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi ArabiaChih‐Wei ChuResearch Center for Applied Sciences, Academia Sinica, Taipei 10617, TaiwanKung‐Hwa WeiDepartment of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, TaiwanJr‐Hau HeComputer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi ArabiaWen‐Hao ChangDepartment of Electrophysics, National Chiao Tung University, Hsinchu, TaiwanKazu SuenagaNational Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, JapanLain‐Jong LiPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia

2015en

ABI

Аннотация

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

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Идентификаторы

DOI: 10.1126/science.aab4097

Цитирования и источники

Цитирований: 3Использованных источников: 0

Показатели — AkademScholar