Работы, цитирующие эту работу

Работ: 3

Работа: Epitaxial growth of a monolayer WSe ₂ -MoS ₂ lateral p-n junction with an atomically sharp interface

1. Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

   Hsu‐Sheng Tsai, Jhe‐Wei Liou, Yi-Chung Wang +6

   Статья2D Materials and ApplicationsRSC Advances2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000210

2. Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications

   Akhil Sharma, Reyhaneh Mahlouji, Longfei Wu +6

   Статья2D Materials and ApplicationsNanotechnology2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.000035

3. Electronic, magneto-optic and band alignments of MnO2/AlN and MnO2/SiC topological vdW hetrostructures: A DFT study

   Abdulrahman Qais Khaleel, Abhinav Kumar, Farag M. A. Altalbawy +7

   Статья2D Materials and ApplicationsSolid State Communications2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005034