Работы, цитирующие эту работу

Работ: 3

Работа: Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

1. Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures

   Ehsan Elahi, Sobia Nisar, Muhammad Rabeel +7

   Статья2D Materials and ApplicationsMaterials Advances2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.108559

2. Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

   Hsu‐Sheng Tsai, Jhe‐Wei Liou, Yi-Chung Wang +6

   Статья2D Materials and ApplicationsRSC Advances2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000210

3. Large area, patterned growth of 2D MoS₂ and lateral MoS₂–WS₂ heterostructures for nano- and opto-electronic applications

   Akhil Sharma, Reyhaneh Mahlouji, Longfei Wu +6

   Статья2D Materials and ApplicationsNanotechnology2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.000035