Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures
Ehsan ElahiDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, South KoreaSobia NisarDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, South KoreaMuhammad RabeelDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, South KoreaMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, UzbekistanMohamed OuladsamneDepartment of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi ArabiaAhmad IrfanDepartment of Chemistry, College of Science, King Khalid University, Abha 61413, P.O. Box 9004, Saudi ArabiaMuhammad AbubakrDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South KoreaJamal AzizSchool of Electrical, Information and Media Engineering, Bergische Universität Wuppertal, Lise-Meitner-Straße 13, Wuppertal 42119, GermanyMuhammad AsimDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, South KoreaGhulam DastgeerDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, South Korea
ABI
Аннотация
van der Waals (vdW) heterostructures in two dimensions have electrical and optoelectronic characteristics that make them a suitable platform for the creation of sophisticated nanoscale electronic devices.
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