Работы, на которые ссылается эта работа
Работ: 44
Работа: Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures
Single-layer MoS2 transistors
Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2
Статья2011Цитирований: 8ABILateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Xidong Duan, Chen Wang, Jonathan C. Shaw +11
Статья2014Цитирований: 3ABIPhotovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Marco M. Furchi, Andreas Pospischil, Florian Libisch +2
Статья2014Цитирований: 3ABILarge‐Size Growth of Ultrathin SnS<sub>2</sub> Nanosheets and High Performance for Phototransistors
Xing Zhou, Qi Zhang, Lin Gan +2
Статья2016Цитирований: 3ABIVisible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
Hehai Fang, Weida Hu, Peng Wang +14
Статья2016Цитирований: 3ABIA facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping
Muhammad Waqas Iqbal, Ehsan Elahi, Aliya Amin +4
Статья2020Цитирований: 3ABISolar-energy conversion and light emission in an atomic monolayer p–n diode
Andreas Pospischil, Marco M. Furchi, Thomas Mueller
Обзорная статья2014Цитирований: 3ABIReSe2/metal interface for hydrogen gas sensing
Sikandar Aftab, Ms Samiya, Mian Sabir Hussain +5
Статья2021Цитирований: 2ABIA review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic
Ehsan Elahi, Ghulam Dastgeer, Ghazanfar Nazir +9
Обзорная статья2022Цитирований: 2ABIArrayed Van Der Waals Broadband Detectors for Dual‐Band Detection
Peng Wang, Shanshan Liu, Wenjin Luo +12
Статья2017Цитирований: 2ABIHighly sensitive and fast phototransistor based on large size CVD-grown SnS<sub>2</sub>nanosheets
Yun Huang, Hui‐Xiong Deng, Kai Xu +8
Статья2015Цитирований: 2ABIAtomically thin p–n junctions with van der Waals heterointerfaces
Chul‐Ho Lee, Gwan‐Hyoung Lee, Arend M. van der Zande +10
Статья2014Цитирований: 2ABIControl of valley polarization in monolayer MoS2 by optical helicity
Kin Fai Mak, Keliang He, Jie Shan +1
Статья2012Цитирований: 2ABIVan der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Tiefeng Yang, Biyuan Zheng, Zhen Wang +12
Статья2017Цитирований: 2ABI