Работы, цитирующие эту работу

Работ: 3

Работа: Dependence of energy gap on<i>x</i>and<i>T</i>in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Se: The role of exchange interaction

1. Room temperature dilute magnetic semiconductor response in (Gd, Co) co-doped ZnO for efficient spintronics applications

   Ihab Shigidi, Sattam Al Otaibi, Khaled Althubeiti +8

   СтатьяZnO doping and propertiesRSC Advances2022Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.008238

2. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

   Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

   СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000236

3. Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

   Naveed Ur Rahman, Muhammad Adil Mahmood, Nasir Rahman +5

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.001624