Structure and Thermoelectric Properties of CoSi-Based Film Composites
V S KuznetsovaIoffe Institute, 194021, St. Petersburg, RussiaС. В. НовиковIoffe Institute, 194021, St. Petersburg, RussiaCharan K. NichenametlaFraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies, Dresden, GermanyJesús CalvoFraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies, Dresden, GermanyMaik Wagner‐ReetzFraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies, Dresden, Germany
2019en
ABI
Аннотация
The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt silicide, the obtained two-layer structure is annealed at a temperature of 760 K for 12 h. The thermoelectric properties of the film structure are studied in the temperature range of 300–800 K. The temperature dependences of the thermoelectric power and resistivity, as well as structural data, indicate the formation of a multilayer structure containing layers with excess silicon and cobalt.
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