Работы, цитирующие эту работу

Работ: 3

Работа: Structure and Thermoelectric Properties of CoSi-Based Film Composites

1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

   I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

   СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22

   ABIABI:AkademIndex/openalex/2022.article.000132

2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.232444

3. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

   S. B. Donaev

   СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.402218