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Работы, на которые ссылается эта работа

Работ: 52

Работа: Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

  1. High-efficiency sub-microscale uncertainty measurement method using pattern recognition

    Chenyang Zhao, Chi Fai Cheung, Peng Xu

    Статья2020Цитирований: 15
    ABI

  2. Van der Waals heterostructures

    A. K. Geim, I. V. Grigorieva

    Статья2013Цитирований: 12
    ABI

  3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

    Qing Hua Wang, Kourosh Kalantar‐Zadeh, András Kis +2

    Обзорная статья2012Цитирований: 11
    ABI

  4. Auger scattering dynamic of photo-excited hot carriers in nano-graphite film

    Sichao Du, Juxin Yin, Hao Xie +11

    Статья2022Цитирований: 8
    ABI

  5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

    Manish Chhowalla, Hyeon Suk Shin, Goki Eda +3

    Статья2013Цитирований: 6
    ABI

  6. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

    Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

    СтатьяGraphene research and applicationsACS Applied Electronic Materials2023Цитирований: 6
    ABI

  7. Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

    Shuai Li, Jieshi Chen, Xiao He +3

    Статья2023Цитирований: 5
    ABI

  8. High Birefringence D-Shaped Germanium-Doped Photonic Crystal Fiber Sensor

    Qianhe Zhao, Jin Liu, Haima Yang +3

    Статья2022Цитирований: 4
    ABI

  9. Improved memory performance of ALD grown HfO2 films by nitrogen doping

    Jamal Aziz, Muhammad Farooq Khan, Daniel Neumaier +9

    Статья2023Цитирований: 4
    ABI

  10. Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe<sub>2</sub>/MoS<sub>2</sub> Dichalcogenide Heterojunction

    Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari +2

    Статья2016Цитирований: 4
    ABI

  11. Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts

    Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4

    Статья2019Цитирований: 3
    ABI

  12. Carrier‐Type Modulation and Mobility Improvement of Thin MoTe<sub>2</sub>

    Deshun Qu, Xiaochi Liu, Ming Huang +6

    Статья2017Цитирований: 3
    ABI

  13. Luminescent Properties and Charge Compensator Effects of SrMo0.5W0.5O4:Eu3+ for White Light LEDs

    Li Kong, Hao Sun, Yuhao Nie +6

    Статья2023Цитирований: 3
    ABI

  14. Phase patterning for ohmic homojunction contact in MoTe <sub>2</sub>

    Suyeon Cho, Sera Kim, Jung Ho Kim +11

    Статья2015Цитирований: 3
    ABI

  15. Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>

    Ignacio Gutiérrez Lezama, Ashish Arora, Alberto Ubaldini +4

    Статья2015Цитирований: 3
    ABI

  16. Bandgap opening in few-layered monoclinic MoTe2

    Dong Hoon Keum, Suyeon Cho, Jung Ho Kim +9

    Статья2015Цитирований: 3
    ABI

  17. Sensing mechanism of an Au-TiO<sub>2</sub>-Ag nanograting based on Fano resonance effects

    Haima Yang, Hongxin Huang, Xiaolin Liu +5

    Статья2023Цитирований: 2
    ABI

  18. Large, non-saturating magnetoresistance in WTe2

    Mazhar N. Ali, Jun Xiong, Steven Flynn +8

    Статья2014Цитирований: 2
    ABI

  19. Two-dimensional spintronics for low-power electronics

    Xiaoyang Lin, Wei Yang, Kang L. Wang +1

    Статья2019Цитирований: 2
    ABI

  20. Pronounced Optoelectronic Effect in n–n ReS<sub>2</sub> Homostructure

    Sewon Park, J. Y. Ha, Muhammad Farooq Khan +7

    Статья2022Цитирований: 2
    ABI

  21. Field-Effect Transistors Based on Few-Layered α-MoTe<sub>2</sub>

    Nihar Pradhan, Daniel Rhodes, Simin Feng +6

    Статья2014Цитирований: 2
    ABI

  22. Controlling Polarity of MoTe<sub>2</sub> Transistors for Monolithic Complementary Logic <i>via</i> Schottky Contact Engineering

    Xia Liu, Arnob Islam, Jing Guo +1

    Статья2020Цитирований: 2
    ABI

  23. Phase-controllable laser thinning in MoTe2

    Seohui Kang, Dongyeun Won, Heejun Yang +5

    Статья2021Цитирований: 2
    ABI

  24. Efficient sulfur host based on Sn doping to construct Fe2O3 nanospheres with high active interface structure for lithium-sulfur batteries

    Ruiyin Ren, Fuming Lai, Xiaoshi Lang +3

    Статья2022Цитирований: 2
    ABI

  25. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

    Xiaofeng Qian, Junwei Liu, Liang Fu +1

    Статья2014Цитирований: 2
    ABI