Работы, цитирующие эту работу

Работ: 3

Работа: Formation of an MoTe₂ based Schottky junction employing ultra-low and high resistive metal contacts

1. Non-volatile phototransistor based on two dimensional MoTe₂ nanostructures

   Kamoladdin Saidov, Khakimjan Butanov, Jamoliddin Razzokov +3

   Статья2D Materials and ApplicationsE3S Web of Conferences2023Цитирований: 3

   ABIABI:AkademIndex/openalex/2023.article.001669

2. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Статья2D Materials and ApplicationsPhysica B Condensed Matter2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.089796

3. Revealing Bipolar Photoresponse in Multiheterostructured WTe₂–GaTe/ReSe₂–WTe₂ P–N Diode by Hybrid 2D Contact Engineering

   Ehsan Elahi, Muhammad Rabeel, Bilal Ahmed +11

   Статья2D Materials and ApplicationsACS Applied Materials & Interfaces2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.000289