Electrical properties of InAs irradiated with protons

The results of studying the electrical properties of InAs irradiated with 5-MeV H+ ions at a dose of 2×1016 cm−2 are reported. It is shown that, independently of the doping level and the conductivity type of the as-grown InAs, InAs always has the n +-type conductivity after irradiation (n≈(2–3)×1018 cm−3). The phenomenon of pinning of the Fermi level in the irradiated material is discussed. The thermal stability of radiation damage in InAs subjected to postirradiation annealing at temperatures as high as 800°C was studied.

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