Работы, цитирующие эту работу

Работ: 2

Работа: Field-Effect Transistors Based on Few-Layered α-MoTe₂

1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Статья2D Materials and ApplicationsPhysica B Condensed Matter2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.089796

2. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

   Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

   Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.review-article.000035