Работы, цитирующие эту работу

Работ: 2

Работа: Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor

1. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

   Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

   СтатьяAdvanced Memory and Neural ComputingNanomaterials2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2023.article.004001

2. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

   Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

   Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.review-article.000035