Depth profiles of metal ions implanted in dielectrics at low energies

The depth profiles of Cu+, Ag+, and Au+ ions implanted into amorphous dielectric SiO2, Al2O3, and soda-lime silicate glass (SLSG) are simulated by the DYNA program. The algorithm follows projectile-ion-substrate-atom pair collisions giving rise to a dynamic variation in the phase composition in the surface layer of the irradiated material and takes into account surface sputtering. Ion implantation up to doses of ≤1016 ion/cm2 at low ion energies of 30, 60, and 100 keV is considered. The measured dynamic variation of the depth profiles of implanted ions as a function of the dose is compared with the standard statistical distribution calculated by the TRIM algorithm.

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