Работы, цитирующие эту работу

Работ: 2

Работа: Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

1. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

   Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10

   СтатьяGaN-based semiconductor devices and materialsApplied Physics Letters2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.article.000021

2. Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

   Ahmet Saymbetov, Р. А. Муминов, Jing Zhang +8

   СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsScientific Reports2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.009538