Статья

Characteristics of CdTe films of different compositions fabricated by CMBD

T.M. RazykovScientific Association “Physics-Sun”, Uzbek Academy of Sciences, Tashkent, UzbekistanR. AcherDepartment of Chemical Engineering, University of Florida, USAO.D. CrisalleDepartment of Chemical Engineering, University of Florida, USAV. CrăciunDepartment of Materials Science and Engineering, University of FloridaTravis J. AndersonDepartment of Chemical Engineering, University of Florida, USAK.M. KouchkarovScientific Association “Physics-Sun”, Uzbek Academy of Sciences, Tashkent, UzbekistanShuguang LiDepartment of Electrical and Computer Engineering, University of Florida, USADebarghya GoswamiDepartment of Aerospace and Mechanical Engineering, University of Florida, Gainesville, FL, USASanjay VijayaraghavanDepartment of Aerospace and Mechanical Engineering, University of Florida, Gainesville, FL, USA

2005en

ABI

Аннотация

CdTe films with near stoichiometric compositions and cadmium-rich compositions were fabricated by a novel low-cost chemical molecular beam deposition (CMBD) technique at atmospheric pressure under hydrogen or nitrogen gas flow. X-ray diffraction analysis and scanning electron microscopy studies show different grain growth by CMBD depending on the composition of samples. Those grown with cadmium rich compositions were of poor quality with large discontinuous island structures. On the other hand, samples grown with near stoichiometric compositions were polycrystalline with large grain size and uniform thickness. Additionally, films grown under nitrogen flow contained a cadmium tellurium oxide phase while those grown under hydrogen did not.

Перевод пока недоступен

Темы

Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Advanced Semiconductor Detectors and Materials

Идентификаторы

DOI: 10.1109/pvsc.2005.1488175

Цитирования и источники

Цитирований: 3 Использованных источников: 2

Показатели — AkademScholar