Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
Jeff B. CasadyNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.AWayne JohnsonNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.A
1996en
ABI
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