Работы, цитирующие эту работу

Работ: 4

Работа: Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

1. Investigation of Effective Parameters Ce and Zr in the Synthesis of H-ZSM-5 and SAPO-34 on the Production of Light Olefins from Naphtha

   Omer Dhia Aldeen Salah Aldeen, Mustafa Z. Mahmoud, Hasan Sh. Majdi +3

   СтатьяAdvancements in Battery MaterialsAdvances in Materials Science and Engineering2022Цитирований: 14

   ABIABI:AkademIndex/openalex/2026.other.036297

2. Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

   Alexander Schmidt, Yuri V. Trushin, K. L. Safonov +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000251

3. SiC plasma characterization produced by 3 ns pulse laser at 10 ¹⁰ W/cm ² intensity

   L. Torrisi, A. Torrisi, M. Cutroneo

   СтатьяSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003009

4. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

   Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.002506