Работы, цитирующие эту работу

Работ: 3

Работа: Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

1. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

   Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

   СтатьяInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2000Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.203259

2. Influence of ion implantation and annealing on composition and structure of GaAs surface

   M.T. Normuradov

   СтатьяIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000329

3. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

   S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

   СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.006628