Coverage properties of silicon nitride film prepared by the Cat-CVD method
S. OsonoSchool of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, JapanY. UchiyamaInstitute for Super Materials, ULVAC, Inc, 2500 Hagisono, Chigasaki, Kanagawa 253-8543, JapanMakiko KitazoeInstitute for Super Materials, ULVAC, Inc, 2500 Hagisono, Chigasaki, Kanagawa 253-8543, JapanKazuya SaitoInstitute for Super Materials, ULVAC, Inc, 2500 Hagisono, Chigasaki, Kanagawa 253-8543, JapanMasahiro HayamaInstitute for Super Materials, ULVAC, Inc, 2500 Hagisono, Chigasaki, Kanagawa 253-8543, JapanAtsushi MasudaSchool of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, JapanAkira IzumiInstitute for Super Materials, ULVAC, Inc, 2500 Hagisono, Chigasaki, Kanagawa 253-8543, JapanHiroyoshi MatsumuraSchool of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1–1 Asahidai, Tatsunokuchi, Ishikawa 923–1292, Japan
2003en
ABI
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