Работы, цитирующие эту работу

Работ: 3

Работа: Coverage properties of silicon nitride film prepared by the Cat-CVD method

1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14

   ABIABI:AkademIndex/openalex/2024.article.000600

2. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001352

3. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

   S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

   СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001643