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Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

Ulrich StarkeLehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, GermanyJ. SchardtLehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, GermanyW. WeißLehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, GermanyG. RangelovMax-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, D-85748 Garching, GermanyThomas FausterLehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, GermanyK. HeinzLehrstuhl; für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany
1998en
ABI

Аннотация

Expitaxial films of CoSi 2 on Si(111) were investigated by low-energy electron diffraction. Films of approximately 12 Å thickness were prepared by simultaneous deposition of Co and Si and subsequent annealing. The films were found to crystallize in CaF 2 structure in (111) orientation. Two (1×1) phases of different stoichiometry exist. The surface phase that contains more Co is found to be a CoSi 2 (111) bulklike structure terminated by a Si–Co–Si trilayer. The Si-rich phase is terminated by an additional nonrotated silicon bilayer with the lower silicon atoms bound to cobalt in the first CoSi 2 layer. Consequently, these cobalt atoms have an eightfold coordination. Due to the lattice mismatch the silicide films are expanded by 0.5% in the lateral direction and contracted by 1.4% in the vertical direction.

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