Работы, цитирующие эту работу

Работ: 4

Работа: Structure of Epitaxial CoSi₂ Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

   Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.095303

2. Electronic and Optical Properties of NiSi2/Si Nanofilms

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

   СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.402216

3. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.007102

4. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010336