Работы, цитирующие эту работу

Работ: 3

Работа: Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe₂

1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Статья2D Materials and ApplicationsPhysica B Condensed Matter2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.089796

2. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

   Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

   СтатьяAdvanced Memory and Neural ComputingNanomaterials2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2023.article.004001

3. Single flake homo p–n diode of MoTe ₂ enabled by oxygen plasma doping

   Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

   Статья2D Materials and ApplicationsNanotechnology Reviews2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.248192