Работы, цитирующие эту работу

Работ: 2

Работа: Homogeneous 2D MoTe₂ p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Статья2D Materials and ApplicationsPhysica B Condensed Matter2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.089796

2. Single flake homo p–n diode of MoTe ₂ enabled by oxygen plasma doping

   Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

   Статья2D Materials and ApplicationsNanotechnology Reviews2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.248192