Работы, на которые ссылается эта работа

Работ: 5

Работа: The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

1. Current Injection in Solids

   A. M. Stoneham

   Статья1970Цитирований: 27

   ABIABI:AkademIndex/openalex/2026.other.262325

2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

   Chih‐Tang Sah, Robert N. Noyce, W. Shockley

   Статья1957Цитирований: 14

   ABIABI:AkademIndex/openalex/2026.other.382034

3. Mobility-lifetime product and interface property in amorphous silicon solar cells

   H. Okamoto, H. Kida, Shuichi Nonomura +2

   Статья1983Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.568654

4. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

   A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.568655

5. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.568656