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Работ: 2
Работа: Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
Role of Anion Variation in Physical Properties of Novel Vacancy Ordered Ga2PtX6 (X = Br and I) for Solar Cell and Thermoelectric Applications
Abrar Nazir, Ejaz Ahmad Khera, Mumtaz Manzoor +5
СтатьяChalcogenide Semiconductor Thin FilmsJournal of Inorganic and Organometallic Polymers and Materials2025Цитирований: 6ABI