Defect-formation processes in silicon doped with manganese and germanium

Deep-level transient spectroscopy has been used to study the effect of Ge atoms on the behavior of Mn in Si. It is shown that Ge atoms introduced into Si during growth manifest no electrical activity, even though their concentration is rather high: 1016–1019 cm−3. It is established that the presence of Ge atoms in the Si lattice enhances the efficiency of the formation of the deep levels E c -0.42 eV and E c -0.54 eV, which are associated with Mn in the Si lattice: the concentration of these deep levels in Si〈Ge, Mn〉 samples is a factor of 3–4 greater than in Si〈Mn〉. It is found that the presence of Ge atoms stabilizes the properties of the Mn levels in Si: They anneal more slowly than in Si〈Mn〉 by a factor of 5–6. It is assumed that the detected effects are associated with the features of the defect structure of Si doped with Ge and Mn.

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