Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method
A. Yu. LeĭdermanInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanM. M. KhashaevInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The recombination processes that determine the lifespan of nonequilibrium charge carriers in gallium arsenide that is grown via the Czochralski method and contains recombination complexes formed by shallow donors and vacancies are analyzed. The recombination through such complexes at photoexcitation may reach saturation, and this may result in a linear dependence of the lifespan on the excitation level and superlinear growth in the short-circuit current of a photoelectric cell with increasing excitation level.
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