Modeling defect formation in nano-ZrO₂ under He and H+ irradiation

In the given work, compliance with the distribution law of defect vacancies formed in ZrO 2 crystal irradiated with 2[Formula: see text]MeV energy H[Formula: see text] ions at room temperature was studied (The fluxes density for the H[Formula: see text] ion was chosen to be 1017 ions/cm 2 ). The effect of H[Formula: see text] ions with fluxes density at different temperatures (500 ∘ C, 600 ∘ C, 700 ∘ C, 800 ∘ C and 900 ∘ C) on W and S parameters was determined. The mechanism of formation of nanoclusters in the ZrO 2 crystal structure under the influence of H[Formula: see text] radiation, the vacancy cluster formed by 2Zr vacancies and 4O vacancies, and its location in triple spaces with hydrogen atoms were determined. 2Zr and 4 vacancies were determined by the [Formula: see text] values of the vacancy clusters growing under the influence of radiation and the positions of hydrogen atoms in the 1VZr, 1VO, di-VZrO triple-VZrO 2 vacancy groups.

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