Analysis of InGaP(001) surface by the low energy ion scattering spectroscopy
Uchkun KutlievUrgench State University, Department of Physics, 14, Khamid Olimjan St., Urgench 220100, UzbekistanМ. K. KаrimovUrgench State University, Department of Physics, 14, Khamid Olimjan St., Urgench 220100, UzbekistanF.O. KuryozovUrgench branch of Tashkent Medical Academy, Department of Informatics and Biophysics, 28, Al-Khorazmi St., Urgench, 220100, UzbekistanKamola OtabaevaUrgench State University, Department of Physics, 14, Khamid Olimjan St., Urgench 220100, Uzbekistan
ABI
Аннотация
Abstract Ion scattering spectroscopy, which is a variation of low energy ion scattering (LEIS) that employs glancing scattering angles, is performed on InGaP(001) surfaces. LEIS energy distribution are simulated by computer simulation along the <110> and <ī10> direction, and the match of the positions of the flux peaks shows that the top three atomic layers are bulk-terminated. A newly observed feature are identified as a minimum in the multiple scattering when the ion beam incidence is along a low index direction. Calculated trajectories of scattered ions. This new method for analysis of large-angle LEIS data was shown to be useful for accurately investigating complex surface structures.
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