Pulsed laser deposition of Al x Ga1–x As and GaP thin films onto Si substrates for photoelectric converters

Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman spectroscopy. The application of Al0.3Ga0.7As and GaP films as wide-gap windows of silicon photoelectric converters is examined. The spectral characteristics of photocells based on Al0.3Ga0.7As/Si and GaP/Si heterostructures are studied. The heterostructures can be used as the first p–n junction of a Si-based multijunction photoelectric converter.

Перевод пока недоступен