Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction
Neelima DeshmukhDepartment of Physics, University of Pune, Pune-411007, IndiaTejashree BhaveDepartment of Physics, University of Pune, Pune-411007, IndiaAnita Sagadevan EthirajDepartment of Physics, University of Pune, Pune-411007, IndiaS. R. SainkarNational Chemical Laboratory, Pune-411 008, IndiaV. GanesanInter University Consortium for DAE Facilities, University Campus, Indore-452017, IndiaS. V. BhoraskarDepartment of Physics, University of Pune, Pune-411007, IndiaSulabha K. KulkarniDepartment of Physics, University of Pune, Pune-411007, India
2001en
ABI
Аннотация
Chemically capped CdS nanoparticles are embedded in porous silicon (PS) by a dip coating method. Atomic force microscopy measurements reveal that the PS surface is covered with CdS nanoparticles forming well-defined rectangular blocks of nearly uniform size (200×200 nm2). Photoelectron spectroscopy and energy dispersive x-ray analysis confirm the presence of CdS in PS. Optical and electrical properties of the heterojunctions so-formed are investigated. Junction characteristics show that the composite so-formed exhibits very high forward current density (145 mA cm-2) and high reverse breakdown voltage (15 V).
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