Работы, цитирующие эту работу

Работ: 4

Работа: Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

1. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3

   ABIABI:AkademIndex/openalex/2025.article.001173

2. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

   Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

   ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000212

3. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000556

4. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.002954