Работы, цитирующие эту работу

Работ: 2

Работа: Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide

1. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

   Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

   СтатьяAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.001186

2. Computer modeling of the adsorption of C20 fullerene molecules on reconstructed silicon Si(001) 2 × 1 and Si(111) 7 × 7 surfaces

   I. Z. Urolov, I. D. Yadgarov, I. R. Bekpulatov +1

   СтатьяFullerene Chemistry and ApplicationsTheoretical Chemistry Accounts2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.001582